2SK300 डाटा शीट PDF( Datasheet )

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2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-585 (Z) 1st. Edition December 1997 Features • Low on-resistance R DS(on) = 0. 25Ω typ. (V GS = 10 V, ID = 450 mA) • 4V gate drive d

2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G0379-0300Z (Previous ADE-208-585A (Z)) Rev.3.00 Jun.15.2004 Features www.DataSheet4U.com R • Low on-resistance DS(on) = 0.16 Ω typ.

2SK3001 GaAs HEMT Low Noise Amplifier www.DataSheet4U.com ADE-208-597(Z) 1st. Edition December 1997 Features • Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz) • High associate

2SK3003 External dimensions 1 ...... FM20 Absolute Maximum Ratings (Ta = 25ºC) Symbol Ratings Unit VDSS 200 V VGSS ±20 V ID ±18 A * ID (pulse) 1 ±72 A PD 35 (Tc = 25ºC) W EAS *2 120

isc N-Channel MOSFET Transistor 2SK3003 FEATURES ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.175Ω(Max) ·100% avalanche te

2SK3004 External dimensions 1 ...... FM20 Absolute Maximum Ratings (Ta = 25ºC) Symbol Ratings Unit VDSS 250 V VGSS ±20 V ID ±18 A * ID (pulse) 1 ±72 A PD 35 (Tc = 25ºC) W EAS *2 120