डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK2980 | Silicon N-Channel MOSFET 2SK2980
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-571B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 500 mA) • 2.5V gate drive devices |
Hitachi Semiconductor |
|
2SK2980 | Silicon N-Channel MOSFET 2SK2980
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA)
• 2.5 V gate drive devices. • Small package (MPAK)
Outline
RENESA |
Renesas |
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