2SK2869 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2SK2869 | N-Channel MOSFET 2SK2869
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-570 1st. Edition Features
• Low on-resistance R DS = 0.033 Ω typ. • High speed switching • 4V gate drive device can be driven from 5 |
 Hitachi Semiconductor |
|
| 2SK2869 | Silicon N Channel MOS FET www.DataSheet4U.com
2SK2869(L), 2SK2869(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1037-0200 (Previous: ADE-208-570) Rev.2.00 Sep 07, 2005
Features
• Low on-resistance RDS = 0.033 Ω typ |
 Renesas Technology |
|
| 2SK2869 | N-Channel Silicon MOSFET SMD Type
N-Channel Silicon MOSFET 2SK2869
IC MOSFET
Features
Low on-resistance RDS = 0.033 typ.
+0.15 6.50-0.15 +0.2 5.30-0.2
TO-252
+0.15 1.50-0.15
+0.1 2.30-0.1 +0.8 0.50-0.7
Unit: mm
High speed switchin |
 Kexin |
|
| 2SK2869L | Silicon N Channel MOS FET www.DataSheet4U.com
2SK2869(L), 2SK2869(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1037-0200 (Previous: ADE-208-570) Rev.2.00 Sep 07, 2005
Features
• Low on-resistance RDS = 0.033 Ω typ |
Renesas Technology |
|
| 2SK2869S | Silicon N Channel MOS FET www.DataSheet4U.com
2SK2869(L), 2SK2869(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1037-0200 (Previous: ADE-208-570) Rev.2.00 Sep 07, 2005
Features
• Low on-resistance RDS = 0.033 Ω typ |
Renesas Technology |
शेयर लिंक :
[1]
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