| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba |
2SK2865 PD EAS IAR EAR Tch Tstg 600 600 ±30 2 5 8 20 93 2 2 150 −55 to 150 V V V A A A W mJ A mJ °C °C 2.3 ± 0.15 2.3 ± 0.15 1. GATE 2. DRAIN （HEAT SINK） 3. SOURSE 2 1 3 JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) Note: Using continuous |
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Toshiba Semiconductor |
N-Channel MOSFET PD EAS IAR EAR Tch Tstg 600 600 ±30 2 5 8 20 93 2 2 150 −55 to 150 V V V A A A W mJ A mJ °C °C 2.3 ± 0.15 2.3 ± 0.15 1. GATE 2. DRAIN （HEAT SINK） 3. SOURSE 2 1 3 JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) Note: Using continuous |
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