डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK2796L | Silicon N-Channel MOSFET 2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-534C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.12Ω typ. • 4V gate drive devices. • High spe |
Hitachi Semiconductor |
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2SK2796L | N-Channel MOSFET isc N-Channel MOSFET Transistor
2SK2796L
FEATURES ·Drain Current –ID= 16.9A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 85mΩ(Max) ·100% avalanche te |
INCHANGE |
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