2SK2788 डाटा शीट PDF( Datasheet )

2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st. Edition Features • Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A) • Low drive current • High speed switchin

2SK2788 Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.12  typ (VGS = 10 V, ID = 1 A)  Low drive current  High speed switching  4 V gate drive device