डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK2645 | N-Channel MOSFET isc N-Channel MOSFET Transistor
2SK2645
·FEATURES ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·High speed Switching ·Repetitive Avalanche rated ·Minimum Lot-to-Lot variation |
INCHANGE |
|
2SK2645-01MR | N-channel MOS-FET 2SK2645-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
600V
1,2 |
Fuji Electric |
www.DataSheet.in | 2017 | संपर्क |