2SK260 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus

2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance z High forward transfer adm

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2601 ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot

2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2602 Switching Regulator Applications z Low drain−source ON-resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer ad

2SK2603 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2603 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (O

2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2604 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) l High forwa

2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forwa