2SK259 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus

2SK2590 Silicon N-Channel MOS FET Preliminary Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and r

2SK2590 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regul

Silicon Junction FETs (Small Signal) 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching 0.4 unit: mm 1.6±0.15 0.8±0.1 0.4 q Low noies, high gain q High gate to drain volta

www.DataSheet4U.com 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0300 Rev.3.00 Aug.26.2004 Features • High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, ηD = 50%

www.DataSheet4U.com 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier 1st. Edition Features • High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz) •