2SK258 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus

2SK2586 Silicon N-Channel MOS FET ADE-208-358 C 4th. Edition Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 m typ. High speed switching 4 V gate drive device c