2SK2569 डाटा शीट PDF( Datasheet )

2SK2569 Silicon N-Channel MOS FET ADE-208-384 1st. Edition Application Low frequency power switching Features • • • • Low on-resistance. R DS(on) = 2.6 max. (at V GS = 4 V, I D = 100mA) 2.5V gate dri

2SK2569 Silicon N Channel MOS FET REJ03G1018-0300 Rev.3.00 Dec 27, 2006 Application High speed power switching Features • • • • Low on-resistance. RDS(on) = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA) 2.