2SK2253-01M डाटा शीट PDF( Datasheet )

2SK2253-01M FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 250V 0,5Ω 8A 40W

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and r

2SK2253-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 250V 0,5Ω 8A 40