2SK225 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2SK225 | Silicon N-Channel MOSFET |
 Hitachi |
|
| 2SK2250-01L | N-channel MOS-FET 2SK2250-01L,S
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
250V
2Ω
2A
10W |
 Fuji Electric |
|
| 2SK2250-01S | N-channel MOS-FET 2SK2250-01L,S
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
250V
2Ω
2A
10W |
Fuji Electric |
|
| 2SK2251-01 | N-channel MOS-FET 2SK2251-01
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
250V
2Ω
2A
20W
> |
Fuji Electric |
|
| 2SK2251-01 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK2251-01
DESCRIPTION ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
perfo |
 Inchange Semiconductor |
|
| 2SK2252-01L | N-channel MOS-FET 2SK2252-01L,S
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
250V
0,5Ω
8A
5 |
Fuji Electric |
|
| 2SK2252-01S | N-channel MOS-FET 2SK2252-01L,S
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
250V
0,5Ω
8A
5 |
Fuji Electric |
शेयर लिंक :
www.DataSheet.in | 2017 | संपर्क |