डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK216 | Silicon N-Channel MOS FET 2SK213, 2SK214, 2SK215, 2SK216
Silicon N-Channel MOS FET
Application
High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79
Features
• • • |
Hitachi Semiconductor |
|
2SK216 | N-Channel MOSFET 2SK213, 2SK214, 2SK215, 2SK216
Silicon N Channel MOS FET
REJ03G0903-0200 (Previous: ADE-208-1241) Rev.2.00 Sep 07, 2005
Application
High frequency and low frequency power amplifier, high speed switching. Compl |
Renesas Technology |
|
2SK2160 | N-Channel Silicon MOSFET Ordering number:ENN4600A
N-Channel Silicon MOSFET
2SK2160
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilita |
Sanyo Semicon Device |
|
2SK2161 | N-Channel Silicon MOSFET Ordering number:ENN4601A
N-Channel Silicon MOSFET
2SK2161
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilita |
Sanyo Semicon Device |
|
2SK2162 | Silicon N-Channel MOS Type Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
2SK2162
2SK2162
Audio-Frequency Power Amplifier Applications
• High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = |
Toshiba Semiconductor |
|
2SK2165-01 | N-channel MOS-FET 2SK2165-01
FAP-IIIA Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode
N-channel MOS-FET
60V
0,03 |
Fuji Electric |
|
2SK2166-01R | N-channel MOS-FET 2SK2166-01R
FAP-IIIA Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode
N-channel MOS-FET
60V
0,0 |
Fuji Electric |
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