2SK2115 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor 2SK2115 DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·High speed power switching ·Minimum Lot-to-Lot variations for robust device

2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switch