डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK2020-01MR | N-channel MOS-FET 2SK2020-01MR
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
500V
3Ω
3,5A
30 |
Fuji Electric |
|
2SK2020-01MR | N-Channel MOSFET isc N-Channel MOSFET Transistor
2SK2020-01MR
DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust devic |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |