2SK2020-01 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance

2SK2020-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 3Ω 3,5A 30

isc N-Channel MOSFET Transistor 2SK2020-01MR DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust devic