डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK1984 | N-Channel MOSFET isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and |
INCHANGE |
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2SK1984-01M | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1984-01M
DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900V(Min) ·Fast Switching Speed
AP |
Inchange Semiconductor |
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2SK1984-01MR | N-channel MOS-FET 2SK1984-01MR
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
900V
4Ω
3A
40W
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Fuji Electric |
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