डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK198 | Silicon N-Channel MOSFET Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
0.40+0.10 –0.05
Unit: mm
0.16+0.10 –0.06
s Features
q High mutual conductance gm q Low |
Panasonic Semiconductor |
|
2SK1981 | N-Channel MOSFET isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance a |
INCHANGE |
|
2SK1981-01 | N-channel MOS-FET 2SK1981-01
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
500V
0,76Ω
10A
80 |
Fuji Electric |
|
2SK1981-01 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed
isc Product Specification
2SK1981-01
AP |
Inchange Semiconductor |
|
2SK1982 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance an |
Inchange Semiconductor |
|
2SK1982-01M | N-Channel MOSFET isc N-Channel MOSFET Transistor
2SK1982-01M
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
p |
INCHANGE |
|
2SK1982-01MR | N-CHANNEL SILICON POWER MOSFET |
Fuji Electric |
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