डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK1937-01 | N-channel MOS-FET 2SK1937-01
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
500V
0,48Ω
15A
12 |
Fuji Electric |
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2SK1937-01 | N-Channel MOSFET isc N-Channel MOSFET Transistor
2SK1937-01
DESCRIPTION ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
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INCHANGE |
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