डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK1936 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance a |
Inchange Semiconductor |
|
2SK1936-01 | N-channel MOS-FET 2SK1936-01
FAP-IIA Series
> Features
- High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof
> Applications
- Switching |
Fuji Electric |
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