डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK193 | N-Channel FET |
NEC |
|
2SK1930 | Silicon N-Channel MOSFET 2SK1930
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1930
Chopper Regulator, DC−DC Converter, and Motor Drive Applications
Unit: mm
l Low drain−source ON resistance : RDS |
Toshiba Semiconductor |
|
2SK1931 | VR Series Power MOSFET SHINDENGEN
VR Series Power MOSFET
N-Channel Enhancement type
2SK1931
( F5E20 )
200V 5A
FEATURES •œ Applicable to 4V drive. •œ The static Rds(on) is small. •œ Built-in ZD for Gate Protection. APPLICATI |
Shindengen Electric Mfg.Co.Ltd |
|
2SK1933 | Silicon N-Channel MOSFET 2SK1933
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator
Outline
TO-3P |
Hitachi Semiconductor |
|
2SK1933 | Silicon N Channel MOS FET 2SK1933
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator
Outline
REJ03G09 |
Renesas |
|
2SK1933 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance an |
Inchange Semiconductor |
|
2SK1934 | Silicon N-Channel MOSFET 2SK1934
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • Low on–resistance High speed switching No secondary breakdown Suitable for Switching regulator
Outline
TO- |
Hitachi Semiconductor |
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