2SK1917-M डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor 2SK1917-M DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device per

2SK1917-MR N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET F-II SERIES Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Applications S