2SK184 डाटा शीट PDF( Datasheet )

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK184 2SK184 Low Noise Audio Amplifier Applications Unit: mm · High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) · High breakdown volt

Ordering number:EN4635 N-Channel Enhancement Silicon MOSFET 2SK1840 Analog Switch Applications Features · Largeyfs. · Enhancement type. · Low ON resistance. Package Dimensions unit:mm 2024B [2SK1840

Ordering number:EN4636 N-Channel Enhancement Silicon MOSFET 2SK1841 Ultrahigh-Speed Switching, Analog Switch Applications Features · Largeyfs. · Enhancement type. · Low ON resistance. Package Dimens

Silicon Junction FETs (Small Signal) 2SK1842 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 0.65±0.15 +0.2 unit: mm 0.65±0.15 2.8 –0.3 1.5 –0.05 +0.25 s

Power F-MOS FETs 2SK1846 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown s Ap

Ordering number:EN4505 N-Channel Silicon MOSFET 2SK1847 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 20

Ordering number:EN4500 N-Channel Silicon MOSFET 2SK1848 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 20