डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK183 | (2SK180 - 2SK183) Power FET www.DataSheet4U.com
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Yoshino International |
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2SK1830 | N-Channel MOSFET TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1830
High Speed Switching Applications Analog Switch Applications
• 2.5 V gate drive • Low threshold voltage: Vth = 0.5 to 1.5 V • High speed |
Toshiba Semiconductor |
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2SK1831 | Silicon N-Channel MOSFET 2SK1831, 2SK1832
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for swit |
Hitachi Semiconductor |
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2SK1832 | Silicon N-Channel MOSFET 2SK1831, 2SK1832
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for swit |
Hitachi Semiconductor |
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2SK1833 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 2.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and |
Inchange Semiconductor |
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2SK1833 | Silicon N-Channel MOSFET Power F-MOS FETs
2SK1833
Silicon N-Channel Power F-MOS FET
s Features q Avalanche energy capacity guaranteed: EAS > 90mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 30ns q No secondary breakdown
s Ap |
Panasonic |
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2SK1834 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage
: VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and rel |
Inchange Semiconductor |
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