डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK1822-01M | N-channel MOS-FET 2SK1822-01M
FAP-IIIA Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode
N-channel MOS-FET
60V
0,0 |
Fuji Electric |
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2SK1822-01M | N-channel MOS-FET | Fuji Electric |
www.DataSheet.in | 2017 | संपर्क |