2SJ587 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2SJ587 | Silicon P Channel MOS FET High Speed Switching 2SJ587
Silicon P Channel MOS FET High Speed Switching
ADE-208-801 (Z) 1st.Edition. June 1999 Features
• Low on-resistance R DS = 8.5 Ω typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = - |
 Hitachi Semiconductor |
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| 2SJ580 | Ultrahigh-Speed Switching Applications |  Sanyo Semicon Device |
|
| 2SJ585LS | Ultrahigh-Speed Switching Applications | Sanyo Semicon Device |
|
| 2SJ587 | Silicon P Channel MOS FET High Speed Switching | Hitachi Semiconductor |
|
| 2SJ584LS | Ultrahigh-Speed Switching Applications | Sanyo Semicon Device |
|
| 2SJ588 | Silicon P Channel MOS FET High Speed Switching | Hitachi Semiconductor |
|
| 2SJ586 | Silicon P Channel MOS FET High Speed Switching | Hitachi Semiconductor |
|
| 2SJ583LS | Ultrahigh-Speed Switching Applications | Sanyo Semicon Device |
|
| 2SJ589LS | DC / DC Converter Applications | Sanyo Semicon Device |
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