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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SJ574 | Silicon P-Channel MOSFET 2SJ574
Silicon P Channel MOS FET High Speed Switching
ADE-208-739B (Z) 3rd.Edition. June 1999 Features
• Low on-resistance R DS = 1.1 Ω typ. (VGS = -10 V , I D = -150 mA) R DS = 2.2 Ω typ. (VGS = -4 V , |
Hitachi Semiconductor |
|
2SJ574 | P-Channel MOSFET 2SJ574
Silicon P Channel MOS FET High Speed Switching
Features
• Low on-resistance RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA) RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA)
• 4 V gate drive devic |
Renesas |
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