2SJ555 डाटा शीट PDF( Datasheet )

2SJ555 Silicon P Channel MOS FET High Speed Power Switching ADE-208-634A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.017 Ω typ. • Low drive current. • 4V gate drive devices. �

2SJ555 Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.017 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. Out