डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SJ553S | Silicon P-Channel MOSFET 2SJ553(L),2SJ553(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-650B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.028 Ω typ. • Low drive current. • 4V gate drive |
Hitachi Semiconductor |
|
2SJ553S | P-Channel MOSFET 2SJ553(L), 2SJ553(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0900-0400 (Previous: ADE-208-650B)
Rev.4.00 Sep 07, 2005
Features
• Low on-resistance RDS (on) = 0.028 Ω typ.
� |
Renesas |
www.DataSheet.in | 2017 | संपर्क |