2SJ552L डाटा शीट PDF( Datasheet )

2SJ552(L),2SJ552(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-651B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.042 Ω typ. • Low drive current. • 4V gate drive

2SJ552(L), 2SJ552(S) Silicon P Channel MOS FET Description High speed power switching REJ03G0899-0400 (Previous: ADE-208-651B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 0.042 Ω typ. �