2SJ551S डाटा शीट PDF( Datasheet )

2SJ551(L),2SJ551(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-647B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.050 Ω typ. • Low drive current. • 4V gate drive

2SJ551(L), 2SJ551(S) Silicon P Channel MOS FET Description High speed power switching REJ03G0898-0400 (Previous: ADE-208-647B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 0.050 Ω typ. �