डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SJ550 | Silicon P-Channel MOSFET 2SJ550(L),2SJ550(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-633A (Z) 2nd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.075 Ω typ. • Low drive current. • 4V gate drive |
Hitachi Semiconductor |
|
2SJ550 | P-Channel MOSFET 2SJ550(L), 2SJ550(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0897-0300 (Previous: ADE-208-633A)
Rev.3.00 Sep 07, 2005
Features
• Low on-resistance RDS (on) = 0.075 Ω typ.
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Renesas |
|
2SJ550L | Silicon P-Channel MOSFET 2SJ550(L),2SJ550(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-633A (Z) 2nd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.075 Ω typ. • Low drive current. • 4V gate drive |
Hitachi Semiconductor |
|
2SJ550L | P-Channel MOSFET 2SJ550(L), 2SJ550(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0897-0300 (Previous: ADE-208-633A)
Rev.3.00 Sep 07, 2005
Features
• Low on-resistance RDS (on) = 0.075 Ω typ.
� |
Renesas |
|
2SJ550S | Silicon P-Channel MOSFET 2SJ550(L),2SJ550(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-633A (Z) 2nd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.075 Ω typ. • Low drive current. • 4V gate drive |
Hitachi Semiconductor |
|
2SJ550S | P-Channel MOSFET 2SJ550(L), 2SJ550(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0897-0300 (Previous: ADE-208-633A)
Rev.3.00 Sep 07, 2005
Features
• Low on-resistance RDS (on) = 0.075 Ω typ.
� |
Renesas |
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