डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SJ200 | P-Channel MOSFET TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ200
High Power Amplifier Application
High breakdown voltage
: VDSS = −180 V
z High forward transfer admittance : |Yfs| = 4.0 S (typ.)
z Comple |
Toshiba Semiconductor |
|
2SJ201 | P-Channel MOSFET | Toshiba Semiconductor |
|
2SJ200 | P-Channel MOSFET | Toshiba Semiconductor |
|
2SJ204 | P-Channel MOSFET | NEC |
|
2SJ209 | P-Channel MOSFET | NEC |
|
2SJ207 | P-Channel MOSFET | NEC |
|
2SJ203 | MOS FIELD EFFECT TRANSISTOR | NEC |
|
2SJ206 | P-Channel MOSFET | Kexin |
|
2SJ208 | P-Channel MOSFET | NEC |
|
2SJ206 | P-Channel MOSFET | NEC |
|
2SJ208 | P-Channel MOSFET | Kexin |
www.DataSheet.in | 2017 | संपर्क |