2SD999 डाटा शीट PDF( Datasheet )

2SD999 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package.  特征 / Features 饱和压降低，极好的 hFE

NPN Silicon Epitaxial Transistor FEATURES z Low Collector Saturation Voltage: VCE(sat)<0.4V( IC=1.0A,IB =100mA) z Excellent DC Current Gain Linearity: hFE=140Typ.( VCE=1.0V, IC=1.0A) z Complements to PNP type

RoHS 2SD999 2SD999 TRANSISTOR (NPN) FEATURES Power dissipation DPCM: 0.5 W (Tamb=25℃) TCollector current ICM: 1 A .,LCollector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature r

SMD Type Transistors NPN Silicon Epitaxial Transistor 2SD999 Features World standard miniature package:SOT-89. Low collector saturation voltage. Excellent dc current gain linearity. Absolute Maximum Ratings

2SD999 TRANSISTOR (NPN) FEATURES z Low Collector-Emitter Saturation Voltage z Mini Power Type Package z Excellent DC Current Gain Linearity SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25�

;EWEͿWůĂƐƚŝĐͲŶĐĂƉƐƵůĂƚĞdƌĂŶƐŝƐƚŽƌ Ϯ^ϵϵϵ< PRIMARY CHARACTERISTICS PC 500mW VCEO 25V IC 1.0A VCE(sat) 0.4V hFE 200–400 TJ,Max 150℃ FEATURES  Low Collector-E