2SD966 डाटा शीट PDF( Datasheet )

Transistor 2SD966 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope 5.9± 0.2 Unit: mm 4.9± 0.2 q q 2.54± 0.15 (Ta=25˚C) Ratings 40 20 7 8 5 1 150 –55 ~ +150 Unit

www.DataSheet4U.net Transistors 2SD0966 (2SD966) Silicon NPN epitaxial planar type For low-frequency amplification For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisf

ST 2SD966 NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special r