2SD965 डाटा शीट PDF( Datasheet )

Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q q s Absolute Maximum Ratings Parameter Collector to

Production specification LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES z Collector current up to 5A z Collector-Emitter voltage up to 20V Pb Lead-free 2SD965 APPLICATIONS z Audio amplifier z Flash unit of c

UNISONIC TECHNOLOGIES CO., LTD 2SD965/A LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up t

Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope s Features q Low collector to emitter saturation voltage VCE(sat). q Satisfactory operation performances

SMD Type Silicon NPN epitaxial planar type 2SD965 Transistors IC www.DataSheet4U.com Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the

DC COMPONENTS CO., LTD. R 2SD965 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use as AF output amplifier and flash unit. TO-92 Pinning 1 = E

ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special re