2SD882U-P डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 3.0A ·Low Saturation Voltage - : VCE(sat)= 0.8V(Max)@ IC= 2.0A, IB= 0.2A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for r

ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter