डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD861 | Silicon NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min) ·High Power Dissipation-
: PC= 45W@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device
perfor |
Inchange Semiconductor |
|
2SD863 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
|
2SD869 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD869 | NPN Transistor | Toshiba |
|
2SD864 | Power Transistor | Inchange Semiconductor |
|
2SD867 | NPN Transistor | Toshiba |
|
2SD860 | Power Transistor | Inchange Semiconductor |
|
2SD861 | Silicon NPN Transistor | Inchange Semiconductor |
|
2SD867 | NPN Transistor | INCHANGE |
|
2SD866 | NPN Transistor | INCHANGE |
|
2SD869 | NPN Transistor | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |