2SD845 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·Complement to Type 2SB755 ·Minimum Lot-to-Lot variations for robust device per

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD845 www.datasheet4u.com DESCRIPTION ·With MT-200 package ·Complement to type 2SB755 ·High transition frequency ·High breakd

MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • With TO-3P(I) package • Recommended for 60~80W high-fidelity frequency amp