2SD73 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD73 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·100% avalanche te

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD730 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 12A ·Low Co

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD731 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Ty

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·High Current Capability ·Complement to Type 2SB696 ·Minimum Lot-to-Lot variations for robust devic

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) ·High Current Capability ·Complement to Type 2SB697 ·Minimum Lot-to-Lot variations for robust devic

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD733 2SD733K www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Complement to type 2SB697/697K ·High power dissipation APPLI

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD733 2SD733K www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Complement to type 2SB697/697K ·High power dissipation APPLI