डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD692 | Silicon NPN Darlingtion Power Transistor isc Silicon NPN Darlingtion Power Transistor
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain-
hFE = 1000 (Min) @ IC =1 Adc ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 80V(Min) |
Inchange Semiconductor |
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2SD692 | Silicon NPN Darlingtion Power Transistor | Inchange Semiconductor |
|
2SD698 | NPN Transistor | Toshiba |
|
2SD691 | Si NPN Transistor | Panasonic |
|
2SD697A | Silicon NPN Transistor | Toshiba |
|
2SD690 | NPN Transistor | INCHANGE |
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2SD693 | NPN Transistor | INCHANGE |
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