डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD687 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 40V(Min) ·Low Collector-Emitter Saturation Voltage |
INCHANGE |
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2SD687 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD687
www.datasheet4u.com
DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·DARLINGTON ·High DC current ga |
SavantIC |
www.DataSheet.in | 2017 | संपर्क |