डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD669 | Silicon NPN Transistor 2SD669, 2SD669A
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB649/A
Outline
TO-126 MOD
1
1. Emitter 2. Collector 3. Base
2
3
2SD669, 2SD669A
Absolute Maximum |
Hitachi Semiconductor |
|
2SD669 | NPN Transistor UNISONIC TECHNOLOGIES CO., LTD
2SD669/A
NPN SILICON TRANSISTOR
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
APPLICATIONS
* Low frequency power amplifier complementary pair with UTC 2SB649/A
ORDERING IN |
UTC |
|
2SD669 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current-IC= 1.5A ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to |
INCHANGE |
|
2SD669 | NPN Transistor 2SD669/2SD669A
Elektronische Bauelemente
NPN Type
Plastic Encapsulate Transistors
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
TO-126C
FEATURES
Power dissipation PCM : 1mW Tamb=25
|
SeCoS |
|
2SD669A | Silicon NPN Transistor 2SD669, 2SD669A
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB649/A
Outline
TO-126 MOD
1
1. Emitter 2. Collector 3. Base
2
3
2SD669, 2SD669A
Absolute Maximum |
Hitachi Semiconductor |
|
2SD669A | NPN Transistor UNISONIC TECHNOLOGIES CO., LTD
2SD669/A
NPN SILICON TRANSISTOR
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
APPLICATIONS
* Low frequency power amplifier complementary pair with UTC 2SB649/A
ORDERING IN |
UTC |
|
2SD669A | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current-IC= 1.5A ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to |
INCHANGE |
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