डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD640 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD640
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V (Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V (Max.)@ IC |
INCHANGE |
|
2SD642 | Silicon NPN Transistor | ETC |
|
2SD649 | Silicon NPN Power Transistor | Inchange Semiconductor |
|
2SD647A | Silicon NPN Transistor | Toshiba |
|
2SD641 | Silicon NPN Transistor | Toshiba |
|
2SD641 | SILICON POWER TRANSISTOR | SavantIC |
|
2SD648A | Silicon NPN Transistor | Toshiba |
|
2SD640 | NPN Transistor | INCHANGE |
|
2SD641 | NPN Transistor | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |