डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD60 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD60
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 75V(Min) ·Excellent Safe Operating Area ·High Current Capability ·Minimum Lot |
INCHANGE |
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2SD600 | PNP/NPN Epitaxial Planar Silicon Transistor Ordering number:346G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB631,631K/2SD600,600K
100V/120V, 1A Low-Frequency Power Amplifier Applications
Features
· High breakdown voltage VCEO 100/120V, High current |
Sanyo Semicon Device |
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2SD600 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to |
INCHANGE |
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2SD600 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD600 2SD600K
www.datasheet4u.com
DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCE |
SavantIC |
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2SD600 | PNP / NPN Epitaxial Planar Silicon Transistors Ordering number : ENN346G
2SB631, 631K/ 2SD600, 600K
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency
Power Amplifier Applications
Features
· High breakdown voltage VCEO 100/120V, Hi |
ON Semiconductor |
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2SD600K | PNP/NPN Epitaxial Planar Silicon Transistor Ordering number:346G
PNP/NPN Epitaxial Planar Silicon Transistor
2SB631,631K/2SD600,600K
100V/120V, 1A Low-Frequency Power Amplifier Applications
Features
· High breakdown voltage VCEO 100/120V, High current |
Sanyo Semicon Device |
|
2SD600K | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to |
INCHANGE |
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