डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD581 | NPN Transistor isc Silicon NPN Power Transistor
2SD581
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@ IC= 5A ·Minimum Lot-to-Lot va |
INCHANGE |
|
2SD587 | Silicon Transistor | ETC |
|
2SD587A | Silicon Transistor | ETC |
|
2SD582A | Silicon NPN Transistor | ETC |
|
2SD583 | NPN Transistor | INCHANGE |
|
2SD582 | NPN Transistor | INCHANGE |
|
2SD581 | NPN Transistor | INCHANGE |
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