डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD570 | NPN Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD570
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 70V(Min.) ·Low Collector Saturation Voltage
: VCE(sat)= 0.6V(Max.)@IC= 2A ·Minim |
INCHANGE |
|
2SD5702 | Silicon NPN Power Transistors isc Silicon NPN Power Transistors
INCHANGE Semiconductor
2SD5702
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed
·High Reliability
·Built-in Damper Diode ·Minimum Lot-to-Lo |
Inchange |
|
2SD5703 | Power Transistor isc Silicon NPN Power Transistors
INCHANGE Semiconductor
2SD5703
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed
·High Reliability ·Minimum Lot-to-Lot variations for robust |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |