डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD555 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V (Min) ·High Power Dissipation ·Complement to Type 2SB600 ·Minimum Lot-to-Lot variations for robust device |
INCHANGE |
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2SD555 | Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD555
DESCRIPTION ·With TO-3 package ·High power dissipation ·Complement to type 2SB600 APPLICATIONS speed ,high current ,high |
SavantIC |
www.DataSheet.in | 2017 | संपर्क |