डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SD2656 | NPN 1A 30V Low Frequency Amplifier Transistors 2SD2656
General purpose amplification (30V, 1A)
Parameter
VCEO IC
Value
30V 1A
lFeatures
1)A collector current is large 2)Collector-Emitter saturation voltage is low. VCE(sat)≦350mV at IC=500mA /IB |
Rohm |
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2SD2658LS | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
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2SD2653K | Transistors | Rohm |
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2SD2657 | Transistors | Rohm |
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2SD2655 | Silicon NPN epitaxial planer type Transistor | Renesas |
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2SD2656 | NPN 1A 30V Low Frequency Amplifier Transistors | Rohm |
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2SD2654 | General Purpose Transistor | Rohm |
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2SD2652 | NPN 1.5A 12V Low Frequency Amplifier Transistors | Rohm |
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2SD2653 | Transistors | Rohm |
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2SD2650 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
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2SD2651 | Silicon NPN Epitaxial Transistor | Hitachi |
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